aot462l/AOB462L 60v n-channel mosfet general description product summary v ds i d (at v gs =10v) 35a r ds(on) (at v gs =10v) < 18m w 100% uis tested 100% r g tested symbol v ds drain-source voltage 60 the aot462l/AOB462L combines advanced trench mosfet technology with a low resistance package to provide extremely low r ds(on) .this device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and le d backlighting. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 60v g ds to220 top view bottom view g g s d d s d d to-263 d 2 pak top view bottom view d d s g g s ds v gs i dm i as , i ar e as , e ar t j , t stg symbol steady-state steady-state r q jc 120 pulsed drain current c continuous drain current g parameter typ max t c =25c 2.1 50 t c =100c r q ja 45 v 20 gate-source voltage units junction and storage temperature range -55 to 175 c thermal characteristics avalanche energy l=0.3mh c mj avalanche current c 6 continuous drain current 101 7 a 26 a t a =25c i dsm a t a =70c i d 35 27 t c =25c t c =100c power dissipation b p d w power dissipation a p dsm w t a =70c 100 1.3 t a =25c maximum junction-to-case c/w c/w maximum junction-to-ambient a d 1.25 60 1.5 g ds to220 top view bottom view g g s d d s d d to-263 d 2 pak top view bottom view d d s g g s rev 0: aug 2010 www.aosmd.com page 1 of 6
aot462l/AOB462L symbol min typ max units bv dss 60 v v ds =60v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 2 3.1 4 v i d(on) 120 a 14.5 18 t j =125c 25 30 14.2 17.7 t j =125c 24.5 30 g fs 50 s v sd 0.73 1 v i s 35 a c iss 1840 2400 pf c oss 185 pf c rss 80 pf r g 2.8 4.2 w q g (10v) 27.8 36 nc q gs 9.9 nc q gd 6.6 nc t d(on) 12 ns t 5.2 ns v gs =10v, i d =30a m w to220 r ds(on) static drain-source on-resistance gate source charge gate drain charge m w maximum body-diode continuous current g input capacitance output capacitance turn-on delaytime dynamic parameters v ds =5v, i d =30a v ds =v gs i d =250 m a v =10v, v =30v, r =1 w , gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =30v, i d =30a reverse transfer capacitance turn-on rise time v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage to263 on state drain current v gs =10v, v ds =5v v gs =10v, i d =30a i s =1a,v gs =0v v gs =0v, v ds =30v, f=1mhz switching parameters electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a drain-source breakdown voltage i d =250 m a, v gs =0v t r 5.2 ns t d(off) 38 ns t f 27 ns t rr 35 64 ns q rr 47 62 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. turn-off delaytime body diode reverse recovery charge i f =30a, di/dt=100a/ m s body diode reverse recovery time i f =30a, di/dt=100a/ m s v gs =10v, v ds =30v, r l =1 w , r gen =3 w turn-off fall time turn-on rise time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r q ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and the maximu m temperature of 175 c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =175 c. ratings are based on low frequency and duty cycl es to keep initial t j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o case r q jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175 c. the soa curve provides a single pulse rating. g. the maximum current limited by package is 120a. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev 0: aug 2010 www.aosmd.com page 2 of 6
aot462l/AOB462L typical electrical and thermal characteristics 17 52 10 0 18 0 20 40 60 80 100 2 3 4 5 6 7 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 10 13 16 19 22 25 0 20 40 60 80 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =10v i d =30a 25 c 125 c v ds =5v v gs =10v 0 20 40 60 80 100 120 140 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =4.5v 7v 10v 5v 6v -40 c 40 0 20 40 60 80 100 2 3 4 5 6 7 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 10 13 16 19 22 25 0 20 40 60 80 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =10v i d =30a 5 10 15 20 25 30 35 40 2 7 12 17 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =5v v gs =10v i d =30a 25 c 125 c 0 20 40 60 80 100 120 140 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =4.5v 7v 10v 5v 6v -40 c -40 c -40 c rev 0: aug 2010 www.aosmd.com page 3 of 6
aot462l/AOB462L typical electrical and thermal characteristics 17 52 10 0 18 0 500 1000 1500 2000 2500 0 10 20 30 40 50 60 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 2 4 6 8 10 0 5 10 15 20 25 30 v gs (volts) q g (nc) figure 7: gate-charge characteristics 10 100 1000 10000 0.00001 0.0001 0.001 0.01 0.1 1 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) c oss c rss v ds =30v i d =30a t j(max) =175 c t c =25 c 10 m s 1.0 10.0 100.0 1000.0 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =175 c t c =25 c 100 m s 40 0 500 1000 1500 2000 2500 0 10 20 30 40 50 60 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 2 4 6 8 10 0 5 10 15 20 25 30 v gs (volts) q g (nc) figure 7: gate-charge characteristics 10 100 1000 10000 0.00001 0.0001 0.001 0.01 0.1 1 power (w) pulse width (s) figure 10: single pulse power rating junction-to- case (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 z q qq q jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) c oss c rss v ds =30v i d =30a single pulse d=t on /t t j,pk =t c +p dm .z q jc .r q jc t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =175 c t c =25 c 10 m s 1.0 10.0 100.0 1000.0 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =175 c t c =25 c 100 m s r q jc =1.5 c/w rev 0: aug 2010 www.aosmd.com page 4 of 6
aot462l/AOB462L typical electrical and thermal characteristics 60v 17 52 10 0 18 0 30 60 90 120 0 25 50 75 100 125 150 175 power dissipation (w) t case ( c) figure 13: power de-rating (note f) 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 current rating i d (a) t case ( c) figure 14: current de-rating (note f) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) t a =25 c 1 10 100 1 10 100 1000 i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (no te c) t a =25 c t a =150 c t a =100 c t a =125 c 40 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0 30 60 90 120 0 25 50 75 100 125 150 175 power dissipation (w) t case ( c) figure 13: power de-rating (note f) 0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 current rating i d (a) t case ( c) figure 14: current de-rating (note f) 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 15: single pulse power rating junction-to- ambient (note h) t a =25 c r q ja =60 c/w 1 10 100 1 10 100 1000 i ar (a) peak avalanche current time in avalanche, t a ( m mm m s) figure 12: single pulse avalanche capability (no te c) t a =25 c t a =150 c t a =100 c t a =125 c rev 0: aug 2010 www.aosmd.com page 5 of 6
aot462l/AOB462L aot462l/AOB462L - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vgs vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 0: aug 2010 www.aosmd.com page 6 of 6
|
